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Download PDF by Gerhard P. Willeke, Eicke R. Weber: Advances in Photovoltaics: Part 2

Posted On March 14, 2018 at 1:00 pm by / Comments Off on Download PDF by Gerhard P. Willeke, Eicke R. Weber: Advances in Photovoltaics: Part 2

By Gerhard P. Willeke, Eicke R. Weber

ISBN-10: 0123813433

ISBN-13: 9780123813435

Semiconductors and Semimetals has special itself in the course of the cautious choice of famous authors, editors, and members. initially well known because the ''Willardson and Beer'' sequence, it has succeeded in publishing various landmark volumes and chapters. The sequence publishes well timed, hugely proper volumes meant for long term impression and reflecting the really interdisciplinary nature of the sector. The volumes in Semiconductors and Semimetals were and should stay of serious curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and sleek undefined. This quantity is the second of a suite of seven concerning photovoltaics.

Written and edited through the world over popular experts
Relevant to a large readership: physicists, chemists, fabrics scientists, and equipment engineers in academia, medical laboratories and glossy

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Extra resources for Advances in Photovoltaics: Part 2

Example text

After Breitenstein et al. (2006a). 8 (A) Dark forward characteristics and (B) voltage-dependent ideality factors of a virgin ideal solar cell (solid line) and three cells with 1-mm long diamond scratches between grid lines with different loads. After Breitenstein et al. (2006a). behaves similar to the scratches made here. Indeed, since the depth of the scratches, at least that with the higher loads, was above the junction depth, the scratch groove crossed the p–n junction, like the edge does. As Fig.

12D may be obtained (Rißland and Breitenstein, 2012). This image shows that also the bright regions in Fig. 12A actually consist of narrow bright lines on darker background. Hence, as also the EL image of this region Fig. 12C shows, the lifetime in most parts of the multicrystalline material volume is quite good, but at the recombination-active grain boundaries it is considerably reduced. Therefore, in these grain boundary positions the local value of J 01 is strongly increased, as Fig. 12D shows.

2011b), by courtesy of Springer. , 2013). They consist of a-type FeSi2, which is a quasi-metallic silicide modification. It can be expected that this silicide forms a Schottky diode to the lowly doped bulk material and an ohmic contact to the highly doped emitter. , 2011b). The actual breakdown should occur at the lower end of the precipitate needle, where the field strength is highest due to the electrostatic tip effect. It will be shown below that, for a p–n junction, this tip effect reduces the breakdown voltage from À60 to À13 V.

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Advances in Photovoltaics: Part 2 by Gerhard P. Willeke, Eicke R. Weber


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