New PDF release: Advances in Photovoltaics: Part 3,
By Gerhard P. Willeke, Eicke R. Weber
This quantity is the 3rd of a collection of 7 related to photovoltaics. sun cell-related applied sciences lined the following comprise: ribbon silicon; heterojunction crystalline silicon; wafer an identical crystalline silicon; and different complicated silicon sunlight mobilephone constructions and processes.
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Additional resources for Advances in Photovoltaics: Part 3,
15 leads to higher implied Voc values, especially for higher Rsheet (lower Psurf). , 2009). , 2010). The laser with a special line-shaped beam profile melts the surface region in the areas for later front contact formation, and the recrystallized region is highly P doped without crystal defects. The resulting profile (depth, peak surface concentration, and Rsheet) can be tailored through laser pulse energy density. This technology adds only one step and is commercialized by Manz. , 2010). , 2010).
2005). Thereby care has to be taken that the emitter on the front side is not attacked by the etch solution or the atmosphere containing reactive species. 4. 33) with wavelength λ and refractive index of the SiNx:H layer nSiN. 34) 9 For back-to-back POCl3 diffusion and inline diffusion, a weak P diffusion is also observed at the rear side, by transport of P atoms via the gas phase. 10 The notation SiNx:H is used, as the silicon nitride layers are not of stoichiometric composition and contain significant amounts of H.
After wafer washing, this saw damage has to be removed, as the disturbed region of the crystal (cracks, dislocations) is of poor electronic quality. For mono-Si, this is done in an alkaline wet chemical solution of KOH and isopropyl alcohol (IPA) at temperatures of around 80 C. The KOH solution etches the Si while the alcohol masks the surface randomly. Etching is anisotropic, with the result that the most densely packed crystal planes in c-Si have the slowest etch rate (the (111)-planes). If the wafer is (100)oriented, the four (111) orientations in the diamond lattice of c-Si will randomly form square-based upright pyramids (Fig.
Advances in Photovoltaics: Part 3, by Gerhard P. Willeke, Eicke R. Weber